GlobalFoundries Partners with Finwave to Advance GaN-on-Si Technology for Mobile Devices

Cutting-edge collaboration aims for mass production by 2026

US-based Finwave Semiconductor has secured a deal with GlobalFoundries (GF) to scale its gallium nitride (GaN)-on-silicon (Si) technology for mobile phone power amplifiers. The partnership targets large-scale manufacturing of Finwave’s high-electron mobility transistors (MISHEMTs) at GF's 200mm facility in Burlington, Vermont, with an eye on mass production by early 2026. This collaboration merges Finwave's advanced GaN-on-Si tech with GF’s US-based manufacturing and RF silicon platforms.

GaN-based MISHEMTs outperform CMOS and gallium arsenide (GaAs) devices in power output and energy efficiency, making them ideal for 5G and future 6G applications. The technology promises significant improvements in power density and efficiency for power amplifiers, essential for new high-frequency 5G bands, 6G, and Wi-Fi 7 systems.

GF is also advancing its own 650V GaN products and will soon introduce 100-200V variants. The company plans to modernize its Burlington facility and expand capacity, aided by a US Chips and Science Act grant aimed at boosting domestic semiconductor production. GF's recent acquisition of Tagore Technology’s power GaN IP portfolio underlines its commitment to high-volume manufacturing of power technologies in the US.

Anticipating a rebound in smart mobile device sales in 2024, GF’s CEO Thomas Caulfield highlighted AI-enabled devices as a catalyst for increased demand in efficient power semiconductors, starting in Q4 2024.